Electrical properties of zinc oxide nanowires and intramolecular p-n junctions
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作者:
Liu, CH
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机构:City Univ Hong Kong, Ctr Super Diamond & Adv Films, Hong Kong, Hong Kong, Peoples R China
Liu, CH
Yiu, WC
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机构:City Univ Hong Kong, Ctr Super Diamond & Adv Films, Hong Kong, Hong Kong, Peoples R China
Yiu, WC
Au, FCK
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机构:City Univ Hong Kong, Ctr Super Diamond & Adv Films, Hong Kong, Hong Kong, Peoples R China
Au, FCK
Ding, JX
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机构:City Univ Hong Kong, Ctr Super Diamond & Adv Films, Hong Kong, Hong Kong, Peoples R China
Ding, JX
Lee, CS
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机构:City Univ Hong Kong, Ctr Super Diamond & Adv Films, Hong Kong, Hong Kong, Peoples R China
Lee, CS
Lee, ST
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City Univ Hong Kong, Ctr Super Diamond & Adv Films, Hong Kong, Hong Kong, Peoples R ChinaCity Univ Hong Kong, Ctr Super Diamond & Adv Films, Hong Kong, Hong Kong, Peoples R China
Lee, ST
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机构:
[1] City Univ Hong Kong, Ctr Super Diamond & Adv Films, Hong Kong, Hong Kong, Peoples R China
[2] City Univ Hong Kong, Dept Phys & Mat Sci, Hong Kong, Hong Kong, Peoples R China
Electrical properties of ZnO nanowires and intramolecular p-n junctions were characterized by I-V measurements. These nanowires were grown embedded in anodic aluminum oxide (AAO) templates by vapor-phase-transport growth method. The nanowires were dense, continuous, and uniform in diameter along the length of the wires. I-V measurements showed the average resistivity of the ZnO nanowires in AAO templates was about one order of magnitude higher than that of the naked single ZnO nanowire. The p-n junctions in ZnO nanowires were fabricated by a two-step growth of ZnO with and without dopant of boron (similar to1 wt %) in the source. I-V results suggested that p-n junctions in ZnO nanowires were formed by the two-step method. (C) 2003 American Institute of Physics.