Electrical properties of zinc oxide nanowires and intramolecular p-n junctions

被引:133
作者
Liu, CH
Yiu, WC
Au, FCK
Ding, JX
Lee, CS
Lee, ST [1 ]
机构
[1] City Univ Hong Kong, Ctr Super Diamond & Adv Films, Hong Kong, Hong Kong, Peoples R China
[2] City Univ Hong Kong, Dept Phys & Mat Sci, Hong Kong, Hong Kong, Peoples R China
关键词
D O I
10.1063/1.1609232
中图分类号
O59 [应用物理学];
学科分类号
摘要
Electrical properties of ZnO nanowires and intramolecular p-n junctions were characterized by I-V measurements. These nanowires were grown embedded in anodic aluminum oxide (AAO) templates by vapor-phase-transport growth method. The nanowires were dense, continuous, and uniform in diameter along the length of the wires. I-V measurements showed the average resistivity of the ZnO nanowires in AAO templates was about one order of magnitude higher than that of the naked single ZnO nanowire. The p-n junctions in ZnO nanowires were fabricated by a two-step growth of ZnO with and without dopant of boron (similar to1 wt %) in the source. I-V results suggested that p-n junctions in ZnO nanowires were formed by the two-step method. (C) 2003 American Institute of Physics.
引用
收藏
页码:3168 / 3170
页数:3
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