Electrical properties of zinc oxide nanowires and intramolecular p-n junctions

Electrical properties of ZnO nanowires and intramolecular p-n junctions were characterized by I-V measurements. These nanowires were grown embedded in anodic aluminum oxide (AAO) templates by vapor-phase-transport growth method. The nanowires were dense, continuous, and uniform in diameter along the length of the wires. I-V measurements showed the average resistivity of the ZnO nanowires in AAO templates was about one order of magnitude higher than that of the naked single ZnO nanowire. The p-n junctions in ZnO nanowires were fabricated by a two-step growth of ZnO with and without dopant of boron (similar to1 wt %) in the source. I-V results suggested that p-n junctions in ZnO nanowires were formed by the two-step method. (C) 2003 American Institute of Physics.