An optical programming/electrical erasing memory device: Organic thin film transistors incorporating core/shell CdSe@ZnSe quantum dots and poly(3-hexylthiophene)

被引:51
作者
Chiu, Mao-Yuan [1 ]
Chen, Chen-Chia [1 ]
Sheu, Jeng-Tzong [2 ]
Wei, Kung-Hwa [1 ]
机构
[1] Natl Chiao Tung Univ, Dept Mat Sci & Engn, Hsinchu 30050, Taiwan
[2] Natl Chiao Tung Univ, Inst Nanotechnol, Hsinchu 30050, Taiwan
关键词
Organic thin film transistor; Memory; Conjugated polymers; Quantum dot; Core/shell; POLYMER; NANOCRYSTALS;
D O I
10.1016/j.orgel.2009.03.011
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
An optical programming/electrical erasing memory device was fabricated by adopting organic thin film transistors incorporating core/shell CdSe@ZnSe quantum dots (QDs) and poly(3-hexylthiophene) (P3HT) as active layers. After illumination, the presence of quantum well-structured core/shell CdSe@ZnSe QDs within the P3HT film enhanced the maximum ON/OFF ratio substantially to 2700; this value was maintained for 8000 s without noticeable decay. The ON state current could be erased effectively when using a single pulse of the gate voltage (- 10 V). This fabrication approach opens up the possibility of improving the memory performance of polymeric materials prepared at low cost using simple processes, (C) 2009 Elsevier B.V. All rights reserved.
引用
收藏
页码:769 / 774
页数:6
相关论文
共 32 条
[1]   Nanotube Transistors as Direct Probes of the Trap Dynamics at Dielectric-Organic Interfaces of Interest in Organic Electronics and Solar Cells [J].
Anghel, Costin ;
Derycke, Vincent ;
Filoramo, Arianna ;
Lenfant, Stephane ;
Giffard, Benoit ;
Vuillaume, Dominique ;
Bourgoin, Jean-Philippe .
NANO LETTERS, 2008, 8 (11) :3619-3625
[2]   Optical properties of core/multishell CdSe/Zn(S,Se) nanocrystals [J].
Bleuse, J ;
Carayon, S ;
Reiss, P .
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2004, 21 (2-4) :331-335
[3]   Optoelectronic switch and memory devices based on polymer-functionalized carbon nanotube transistors [J].
Borghetti, Julien ;
Derycke, Vincent ;
Lenfant, Stephane ;
Chenevier, Pascale ;
Filoramo, Arianna ;
Goffman, Marcelo ;
Vuillaume, Dominique ;
Bourgoin, Jean-Philippe .
ADVANCED MATERIALS, 2006, 18 (19) :2535-+
[4]  
BOURGOIN JP, 2006, P INT EL DEV M, P435
[5]   Photoresponses and memory effects in organic thin film transistors incorporating poly(3-hexylthiophene)/CdSe quantum dots [J].
Chen, Chen-Chia ;
Chiu, Mao-Yuan ;
Sheu, Jeng-Tzong ;
Wei, Kung-Hwa .
APPLIED PHYSICS LETTERS, 2008, 92 (14)
[6]   Photovoltaic effects on the organic ambipolar field-effect transistors [J].
Cho, Shinuk ;
Yuen, Jonathan ;
Kim, Jin Young ;
Lee, Kwanghee ;
Heeger, Alan J. .
APPLIED PHYSICS LETTERS, 2007, 90 (06)
[7]   Gate-voltage control of optically-induced charges and memory effects in polymer field-effect transistors [J].
Dutta, S ;
Narayan, KS .
ADVANCED MATERIALS, 2004, 16 (23-24) :2151-+
[8]   Nonexponential relaxation of photoinduced conductance in organic field effect transistors [J].
Dutta, S ;
Narayan, KS .
PHYSICAL REVIEW B, 2003, 68 (12)
[9]   White-light electroluminescence from a self-assembled Q-CdSe/PPV multilayer structures [J].
Gao, MY ;
Richter, B ;
Kirstein, S .
ADVANCED MATERIALS, 1997, 9 (10) :802-&
[10]   Charge separation and transport in conjugated-polymer/semiconductor-nanocrystal composites studied by photoluminescence quenching and photoconductivity [J].
Greenham, NC ;
Peng, XG ;
Alivisatos, AP .
PHYSICAL REVIEW B, 1996, 54 (24) :17628-17637