Hydrophobicity enhancement of Al2O3 thin films deposited on polymeric substrates by atomic layer deposition with perfluoropropane plasma treatment

被引:13
作者
Ali, Kamran [1 ]
Choi, Kyung-Hyun [1 ]
Kim, Chang Young [2 ,3 ]
Doh, Yang Hoi [4 ]
Jo, Jeongdai [5 ]
机构
[1] Jeju Natl Univ, Dept Mech Engn, Jeju City 690756, Jeju, South Korea
[2] Jeju Natl Univ, Res Inst Basic Sci, Jeju City 690756, Jeju, South Korea
[3] Jeju Natl Univ, Dept Phys, Jeju City 690756, Jeju, South Korea
[4] Jeju Natl Univ, Sch Elect Engn, Jeju City 690756, Jeju, South Korea
[5] Korean Inst Machinery & Mat, Taejon 305343, South Korea
关键词
Al2O3 Atomic layer deposition; C3F8; Hydrophobicity; Contact angle; ALUMINUM; FABRICATION; BEHAVIOR; GROWTH;
D O I
10.1016/j.apsusc.2014.03.135
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The optoelectronics devices such as organic light emitting diodes are greatly vulnerable to moisture, which reduces their functionality and life cycle. The Al203 thin films are mostly used as barrier coatings in such electronic devices to protect them from water vapors. The performance of the Al203 barrier films can be improved by enhancing their hydrophobicity. Greater the hydrophobicity of the barrier films, greater will be their protection against water vapors. This paper reports on the enhancement of hydrophobicity of Al203 thin films through perfluoropropane (C3 F8) plasma treatment. Firstly, good quality Al203 films have been fabricated through atomic layer deposition (ALD) on polyethylene naphthalate (PEN) substrates at different temperatures. The fabricated films are then plasma treated with C3 F8 to enhance their hydrophobicity. Hydrophobic Al203 thin films have shown good morphological and optical properties. Low average arithmetic roughness (Ra) of 1.90 nm, 0.93 nm and 0.88 nm have been recorded for the C3 F8 plasma treated films deposited at room temperature (RT), 50 C and 150 C, respectively. Optical transmittance of more than 90% has been achieved for the C3 F8 plasma treated films grown at 50 C and 150 C. The contact angle has been increased from 48 + 3 to 158 + 3 for the films deposited at RT and increased from 41 + 3 to 148 + 3 for the films deposited at 150 C. (C) 2014 Elsevier B.V. All rights reserved.
引用
收藏
页码:554 / 561
页数:8
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