Electronic properties and elastic constants of the ordered Ge1-xSnx alloys

被引：58

作者：

Bouarissa, N ^{[1
]}

Annane, F

机构：

[1] Univ Msila, Dept Phys, Msila 28000, Algeria

[2] Univ Skikda, Dept Phys, Skikda 21000, Algeria

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2002年 / 95卷 / 02期

关键词：

pseudopotential method; Harrison bond-orbital model; alloys; electronic properties; elastic constants;

D O I：

10.1016/S0921-5107(02)00203-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Based on the pseudopotential method within the virtual crystal approximation combined with the Harrison bond-orbital model, we have investigated the electronic properties and elastic constants of the ordered Ge1-xSnx alloys at low temperatures. Our results agree generally very well with available experimental data. We predict a transition from an indirect to direct gap at x approximate to 0.09. (C) 2002 Published by Elsevier Science B.V.

引用

页码：100 / 106

页数：7

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