共 10 条
[1]
Bouarissa N., 1995, Computational Materials Science, V3, P430, DOI 10.1016/0927-0256(94)00084-P
[2]
CONDUCTION-BAND EDGE CHARGE-DENSITIES IN INXGA1-XSB
[J].
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS,
1995, 190 (01)
:227-239
[3]
THEORETICAL INVESTIGATION OF THE PRESSURE DEPENDENCES OF ENERGY GAPS IN INAS AND INSB
[J].
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY,
1995, 33 (2-3)
:122-132
[4]
KALT H, 1996, SPRINGER SERIES SOLI, V120
[5]
PRESSURE-DEPENDENCE OF THE DIRECT ABSORPTION-EDGE OF INP
[J].
PHYSICAL REVIEW B,
1980, 21 (10)
:4879-4883
[7]
ELECTRON CHARGE-DENSITIES AT CONDUCTION-BAND EDGES OF SEMICONDUCTORS
[J].
PHYSICAL REVIEW B,
1986, 33 (02)
:1177-1182
[8]
DEPENDENCE OF THE PHONON-SPECTRUM OF INP ON HYDROSTATIC-PRESSURE
[J].
PHYSICAL REVIEW B,
1980, 21 (10)
:4869-4878
[9]
PRESSURE-DEPENDENCE OF ENERGY GAPS AND REFRACTIVE-INDEXES OF TETRAHEDRALLY BONDED SEMICONDUCTORS
[J].
PHYSICAL REVIEW B,
1974, 10 (04)
:1476-1481
[10]
PRESSURE-DEPENDENCE OF THE ELECTRONIC-PROPERTIES OF CUBIC III-V IN COMPOUNDS
[J].
PHYSICAL REVIEW B,
1990, 41 (03)
:1598-1602