CONDUCTION-BAND EDGE CHARGE-DENSITIES IN INXGA1-XSB

被引：24

作者：

BOUARISSA, N ^{[1
]}

AOURAG, H ^{[1
]}

机构：

[1] UNIV SIDI BEL ABBES, DEPT PHYS, COMPUTAT MAT SCI LAB, SIDI BEL ABBES 22000, ALGERIA

来源：

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 1995年 / 190卷 / 01期

关键词：

D O I：

10.1002/pssb.2221900131

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The empirical pseudopotential method coupled with the virtual crystal approximation which incorporates compositional disorder as an effective potential is used to compute the electronic conduction band edge charge densities at the Gamma and X points for the ternary alloy InxGa1-xSb. It is found that these charge densities are strongly dependent upon the stochiometric coefficient x. Such differences are crucial for a comprehensive understanding of interstitial impurities and the response of specific band states to perturbation in ternary alloy semiconductors.

引用

页码：227 / 239

页数：13

共 47 条

[1] BAND-GAPS AND REFRACTIVE-INDEXES OF ALGAASSB, GAINASSB, AND INPASSB - KEY PROPERTIES FOR A VARIETY OF THE 2-4-MU-M OPTOELECTRONIC DEVICE APPLICATIONS [J].

ADACHI, S .

JOURNAL OF APPLIED PHYSICS, 1987, 61 (10) :4869-4876

[2] CONDUCTION-BAND-EDGE DENSITIES IN GAXAL1-XSB [J].

AOURAG, H ;

KHELIFA, B ;

BELAIDI, A ;

TADJER, A ;

REZKI, M ;

GAMOUDI, M .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1991, 63 (06) :1267-1275

[3]

AOURAG H, 1995, IN PRESS COMPUT MATE, V3

[4]

AOURAG H, 1990, PHYS LETT A, V145, P305

[5] PIEZOREFLECTANCE MEASUREMENTS ON GAXIN1-XSB ALLOYS [J].

AUVERGNE, D ;

CAMASSEL, J ;

MATHIEU, H ;

JOULLIE, A .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1974, 35 (02) :133-140

[6] PSEUDOPOTENTIAL BAND-STRUCTURE OF AL1-X-YGAXINYAS [J].

AYMERICH, F .

PHYSICAL REVIEW B, 1982, 26 (04) :1968-1973

[7] RELATIVISTIC AND CORE-RELAXATION EFFECTS ON THE ENERGY-BANDS OF GALLIUM-ARSENIDE AND GERMANIUM [J].

BACHELET, GB ;

CHRISTENSEN, NE .

PHYSICAL REVIEW B, 1985, 31 (02) :879-887

[8] BAND-STRUCTURE OF SEMICONDUCTOR ALLOYS BEYOND VIRTUAL CRYSTAL APPROXIMATION, EFFECT OF COMPOSITIONAL DISORDER ON ENERGY GAPS IN GAPXAS1-X [J].

BALDERESCHI, A ;

MASCHKE, K .

SOLID STATE COMMUNICATIONS, 1975, 16 (01) :99-102

[9] ELECTRONIC-STRUCTURE OF ZNS, ZNSE, ZNTE, AND THEIR PSEUDOBINARY ALLOYS [J].

BERNARD, JE ;

ZUNGER, A .

PHYSICAL REVIEW B, 1987, 36 (06) :3199-3228

[10]

BOUHAFS B, 1995, IN PRESS J INFRARED

← 1 2 3 4 5 →