CONDUCTION-BAND EDGE CHARGE-DENSITIES IN INXGA1-XSB

被引：24

作者：

BOUARISSA, N ^{[1
]}

AOURAG, H ^{[1
]}

机构：

[1] UNIV SIDI BEL ABBES, DEPT PHYS, COMPUTAT MAT SCI LAB, SIDI BEL ABBES 22000, ALGERIA

来源：

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 1995年 / 190卷 / 01期

关键词：

D O I：

10.1002/pssb.2221900131

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The empirical pseudopotential method coupled with the virtual crystal approximation which incorporates compositional disorder as an effective potential is used to compute the electronic conduction band edge charge densities at the Gamma and X points for the ternary alloy InxGa1-xSb. It is found that these charge densities are strongly dependent upon the stochiometric coefficient x. Such differences are crucial for a comprehensive understanding of interstitial impurities and the response of specific band states to perturbation in ternary alloy semiconductors.

引用

页码：227 / 239

页数：13

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