CONDUCTION-BAND-EDGE DENSITIES IN GAXAL1-XSB

被引：5

作者：

AOURAG, H

KHELIFA, B

BELAIDI, A

TADJER, A

REZKI, M

GAMOUDI, M

机构：

[1] ECOLE NORMALE SUPER ENSEIGNEMENT TECH ORAN,DEPT PHYS,ORAN 31000,ALGERIA

[2] ENIE SIDI BEL ABBES,DEPT SEMICOND,SIDI BEL ABBES 22000,ALGERIA

[3] UNIV LYON 1,ELECTR SOLIDE LAB,F-69622 VILLEURBANNE,FRANCE

[4] UNIV SIDI BEL ABBES,INST ELECTR,SIDI BEL ABBES 22000,ALGERIA

来源：

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 1991年 / 63卷 / 06期

关键词：

D O I：

10.1080/13642819108205559

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The empirical pseudo potential method, combined with the virtual-crystal approximation, is used to compute electronic charge densities at the GAMMA-c and X(c) k-points of the conduction-band edge in the ternary semiconductor alloy system (Ga(x)Al1-xSb). We find that these charge densities are strongly dependent upon the stoichiometric coefficient x, particularly at the X(c) points. As a consequence, the value of x could change the way that interstitial impurities modify the electronic band structure of the alloy.

引用

页码：1267 / 1275

页数：9

共 8 条

[1]

AOURAG H, 1991, IN PRESS MATH CHEM P

[2] ELECTRONIC-STRUCTURE OF HG1-XCDX TE ALLOYS AND CHARGE-DENSITY CALCULATIONS USING REPRESENTATIVE K POINTS [J].