Studies on structural, optical and electrical properties of indium sulfide thin films

被引：73

作者：

Mane, RS

Lokhande, CD

机构：

[1] Vishwakarma Inst Technol, Dept Phys, Pune 411037, Maharashtra, India

[2] Hahn Meitner Inst Berlin GmbH, D-1000 Berlin, Germany

来源：

MATERIALS CHEMISTRY AND PHYSICS | 2003年 / 78卷 / 01期

关键词：

thin films; XRD; SEM and optical properties;

D O I：

10.1016/S0254-0584(02)00194-3

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Onto amorphous glass substrates, indium sulfide (In2S3) thin films have been successfully deposited using versatile and simple successive ionic layer adsorption and reaction (SILAR) method. These films are characterized by structural, optical and electrical measurement techniques. Uniform distribution of grains is clearly noted from the photograph of scanning electron microscope (SEM). Cubic structure with amorphous nature of films is reported. The optical band gap of In2S3 thin films is estimated to be 2.3 eV. Films were highly resistive possesses resistivity of the order of 10(5) Omega cm. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：15 / 17

页数：3

共 6 条

[1] THIN-FILM CDS/CDTE SOLAR-CELL WITH 15.8-PERCENT EFFICIENCY [J].