GaN/AlGaN heterostructure devices: Photodetectors and field-effect transistors

被引：134

作者：

Shur, MS ^{[1
]}

Khan, MA ^{[1
]}

机构：

[1] APA INC,APA OPT,BLAINE,MN 55449

来源：

MRS BULLETIN | 1997年 / 22卷 / 02期

关键词：

D O I：

10.1557/S0883769400032565

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

[No abstract available]

引用

页码：44 / 50

页数：7

共 34 条

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