Electromigration performance enhancement of Cu interconnects with PVD Ts cap

被引：4

作者：

Gajewski, DA ^{[1
]}

Meixner, T ^{[1
]}

Feil, B ^{[1
]}

Lien, M ^{[1
]}

Walls, J ^{[1
]}

机构：

[1] Motorola SPS, Chandler, AZ 85224 USA

来源：

2004 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS | 2004年

关键词：

electromigration; overlayer; cap; interconnect; activation energy; Ta; Cu;

D O I：

10.1109/RELPHY.2004.1315422

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We demonstrate an electromigration. (EM) performance enhancement of Cu interconnects With PVD Ta cap. The activation energy is higher than for more conventional caps such as silicon nitride, yet uses the same tools and materials as the conventional barrier/seed process, as opposed to electroless Pd or CoWP deposition.

引用

页码：627 / 628

页数：2

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