Enhancing the electromigration resistance of copper interconnects

被引：10

作者：

Dixit, G ^{[1
]}

Padhi, D ^{[1
]}

Gandikota, S ^{[1
]}

Yahalom, J ^{[1
]}

Parikh, S ^{[1
]}

Yoshida, N ^{[1
]}

Shankaranarayanan, K ^{[1
]}

Chen, J ^{[1
]}

Malty, N ^{[1
]}

Yu, J ^{[1
]}

机构：

[1] Appl Mat Inc, Santa Clara, CA USA

来源：

PROCEEDINGS OF THE IEEE 2003 INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE | 2003年

关键词：

D O I：

10.1109/IITC.2003.1219742

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

Various factors such as grain boundary/surface diffusion as well as structural properties of materials are known to affect the final electro-migration (EM) behavior of copper interconnections. Results presented in this paper show that the barrier layer has a strong influence in controlling the width of EM failure distributions. EM tests of samples with alternate barrier, fill and capping layers show that atomic layer chemical vapor deposited (ALCVD) barrier and/or metallic cap layers are key to realize structures with superior EM lifetimes.

引用

页码：162 / 164

页数：3

共 9 条

[1] ELECTROMIGRATION IN THIN ALUMINUM FILMS ON TITANIUM NITRIDE [J].