A TaN-HfO2-Ge pMOSFET with novel SiH4 surface passivation

被引：106

作者：

Wu, N ^{[1
]}

Zhang, QC

Zhu, CX

Chan, DSH

Du, AY

Balasubramanian, N

Li, MF

Chin, A

Sin, JKO

Kwong, DL

机构：

[1] Natl Univ Singapore, Silicon Nano Device Lab, Dept Elect & Comp Engn, Singapore 119260, Singapore

[2] Inst Microelect, Singapore 117685, Singapore

[3] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 30050, Taiwan

[4] Hong Kong Univ Sci & Technol, Dept Elect & Elect Engn, Kowloon, Hong Kong, Peoples R China

[5] Univ Texas, Dept Elect & Comp Engn, Austin, TX 78712 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2004年 / 25卷 / 09期

关键词：

germanium; HfO2; high-kappa; MOSFET; surface passivation;

D O I：

10.1109/LED.2004.833842

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this letter, we demonstrate a novel surface passivation process for HfO2 Ge pMOSFETs using SiH4 surface annealing prior to HfO2 deposition. By using SiH4 passivation, a uniform amorphous interfacial layer is formed after device fabrication. Electrical results show that the HfO2 Ge MOSFET with Si-passivation exhibits less frequency dispersion, narrower gate leakage current distribution, and a similar to 140% higher peak mobility than that of the device with surface nitridation.

引用

页码：631 / 633

页数：3

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