Surface kinetic study of ion-induced chemical vapor deposition of copper for focused ion beam applications

被引：17

作者：

Chiang, TP ^{[1
]}

Sawin, HH ^{[1
]}

Thompson, CV ^{[1
]}

机构：

[1] MIT,DEPT CHEM ENGN,CAMBRIDGE,MA 02139

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1997年 / 15卷 / 06期

关键词：

D O I：

10.1116/1.580853

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

A systematic surface kinetic study of ion-induced chemical vapor deposition (II-CVD) of Cu from Cu(I) hexafluoroacetylacetonate vinyltrimethylsilane was performed using quartz crystal microbalance mass deposition rate measurements, x-ray photoelectron spectroscopy compositional analysis, and laser-induced thermal desorption coverage measurements in a multibeam scattering apparatus. With the above, a phenomenological surface kinetic model describing the adsorption, deposition (both of the desired source metal and of unwanted impurities), byproduct desorption, and sputtering processes involved in II-CVD was formulated. The surface kinetic modal predicts the deposition rate, composition, and precursor coverage dependencies in agreement with experimental results. (C) 1997 American Vacuum Society. [S0734-2101(97)04506-5].

引用

页码：3104 / 3114

页数：11

共 29 条

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