Electron emission characteristics of metal/diamond field emitters

被引：30

作者：

Sugino, T

Iwasaki, Y

Kawasaki, S

Hattori, R

Shirafuji, J

机构：

来源：

关键词：

diamond films; electron emission; field emitter; phosphorus doping;

D O I：

10.1016/S0925-9635(96)00677-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Electron emission characteristics have been investigated for polycrystalline diamond films with negative electron affinity. Phosphorus-doped diamond films are deposited on Si wafers and Cu plates by hot-filament chemical vapor deposition. An Al/diamond contact is formed on the rear side of the diamond him after removing Si substrates. A significant reduction in the applied electric field for the electron emission is achieved by forming Cu/diamond and Al/diamond contacts in comparison to that of diamond on Si. It is revealed that the electron emission characteristics are dominated by electrons injected into the diamond at the metal/diamond contact. (C) 1997 Elsevier Science S.A.

引用

页码：889 / 892

页数：4

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