Geometrical structure of the 1/2-ML (2X1) and 1/3-ML (2X3) Ba/Si(001) interfaces

被引:36
作者
Herrera-Gómez, A
Pianetta, P
Marshall, D
Nelson, E
Spicer, WE
机构
[1] CINVESTAV, Queretaro, Mexico
[2] Stanford Synchrotron Radiat Lab, Stanford, CA 94305 USA
[3] Motorola Inc, Phys Sci Res Labs, Tempe, AZ 85284 USA
关键词
D O I
10.1103/PhysRevB.61.12988
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The adsorption site of Ba deposited on a clean Si(001) surface was measured using x-ray standing-wave spectroscopy (XSW). Two interfaces were considered: half a monolayer with a (2 X 1) surface symmetry, and a third of a monolayer with a (2 X 3) symmetry. Two (111)-like Bragg reflections, ((1) over bar (1) over bar 1) and ((1) over bar (1) over bar 1), were utilized in the XSW experiments. Using the structural results obtained from these two reflections, as well as symmetry arguments, it was possible to establish, in three dimensions, the coordinates of the adsorption site for the two interfaces considered. In both cases, Ba lies near the center of the square formed by four Si surface atoms, at a height close to the projection of the next ideal Si(001) plane.
引用
收藏
页码:12988 / 12991
页数:4
相关论文
共 11 条
[1]   DYNAMICAL DIFFRACTION OF X RAYS BY PERFECT CRYSTALS [J].
BATTERMAN, BW ;
COLE, H .
REVIEWS OF MODERN PHYSICS, 1964, 36 (03) :681-&
[2]   Lattice compression of Si crystals and crystallographic position of As impurities measured with x-ray standing wave spectroscopy [J].
Herrera-Gómez, A ;
Rousseau, PM ;
Woicik, JC ;
Kendelewicz, T ;
Plummer, J ;
Spicer, WE .
JOURNAL OF APPLIED PHYSICS, 1999, 85 (03) :1429-1437
[3]   MICROSCOPIC STRUCTURE OF THE SIO2/SI INTERFACE [J].
HIMPSEL, FJ ;
MCFEELY, FR ;
TALEBIBRAHIMI, A ;
YARMOFF, JA ;
HOLLINGER, G .
PHYSICAL REVIEW B, 1988, 38 (09) :6084-6096
[4]  
JAMES RW, 1947, OPTICAL PRINCIPLES D
[5]  
MCKEE RA, 1993, Patent No. 5225031
[6]   X-RAY PHOTOEMISSION-STUDY OF THE BA SI(100) INTERFACE AND THE OXIDATION OF SI PROMOTED BY BA OVERLAYERS [J].
MESARWI, A ;
IGNATIEV, A .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1991, 9 (04) :2264-2268
[7]   Adsorption structure of Ba on an Si(001)-(2x1) surface [J].
Urano, T ;
Tamiya, K ;
Ojima, K ;
Hongo, S ;
Kanaji, T .
SURFACE SCIENCE, 1996, 357 (1-3) :459-463
[8]   BA DEPOSITION ON SI(100)2X1 [J].
VLACHOS, D ;
KAMARATOS, M ;
PAPAGEORGOPOULOS, C .
SOLID STATE COMMUNICATIONS, 1994, 90 (03) :175-181
[9]   THE BA/SI(100)-2X1 INTERFACE .2. XPS, BIS AND SYNCHROTRON PS STUDIES OF SCHOTTKY-BARRIER FORMATION [J].
WEIJS, PJW ;
VANACKER, JF ;
FUGGLE, JC ;
VANDERHEIDE, PAM ;
HAAK, H ;
HORN, K .
SURFACE SCIENCE, 1992, 260 (1-3) :102-112
[10]   A SIMPLE X-RAY STANDING WAVE TECHNIQUE FOR SURFACE-STRUCTURE DETERMINATION - THEORY AND AN APPLICATION [J].
WOODRUFF, DP ;
SEYMOUR, DL ;
MCCONVILLE, CF ;
RILEY, CE ;
CRAPPER, MD ;
PRINCE, NP ;
JONES, RG .
SURFACE SCIENCE, 1988, 195 (1-2) :237-254