Growth mechanism and characterization of zinc oxide microcages

被引:73
作者
Fan, HJ [1 ]
Scholz, R [1 ]
Kolb, FM [1 ]
Zacharias, M [1 ]
Gösele, U [1 ]
机构
[1] Max Planck Inst Microstruct Phys, D-06120 Halle An Der Saale, Germany
关键词
semiconductors; crystal growth; scanning and transmission electron microscopy;
D O I
10.1016/j.ssc.2004.03.014
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
We report the growth mechanism and structural properties of micrometer sized ZnO cages which were synthesized directly from Zn vapor deposition and oxidation. The ZnO microcages exhibit a hexagonal or spherical shape with partly or completely open surfaces and hollow interiors. The growth process of the microcages includes the deposition of Zn polyhedral particles, top face breaking of the Zn particles and Zn sublimation, and subsequent reaction to ZnO. By controlling the various growth stages, we obtained information on the growth mechanism of the ZnO cages, which appears to be different from a mechanism reported previously. The chemical composition and crystalline structure were studied using energy dispersive X-ray spectroscopy and transmission electron microscopy, respectively. The room-temperature photoluminescence spectrum indicates a large quantity of oxygen-vacancy related defects within the wall of the ZnO cages. (C) 2004 Elsevier Ltd. All rights reserved.
引用
收藏
页码:517 / 521
页数:5
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