Position-controlled epitaxial III-V nanowires on silicon

被引：109

作者：

Roest, Aarnoud L.

Verheijen, Marcel A.

Wunnicke, Olaf

Serafin, Stacey

Wondergem, Harry

Bakkers, Erik P. A. M.

机构：

[1] Philips Res Labs, NL-5656 AA Eindhoven, Netherlands

[2] Delft Univ Technol, Kavli Inst Nanosci, NL-2600 GA Delft, Netherlands

来源：

NANOTECHNOLOGY | 2006年 / 17卷 / 11期

关键词：

D O I：

10.1088/0957-4484/17/11/S07

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We show the epitaxial integration of III - V semiconductor nanowires with silicon technology. The wires are grown by the VLS mechanism with laser ablation as well as metal - organic vapour phase epitaxy. The hetero-epitaxial growth of the III - V nanowires on silicon was confirmed with x-ray diffraction pole figures and cross-sectional transmission electron microscopy. We show preliminary results of two-terminal electrical measurements of III - V nanowires grown on silicon. E-beam lithography was used to predefine the position of the nanowires.

引用

页码：S271 / S275

页数：5

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