SI/INP(110) HETEROJUNCTION

被引:9
作者
MAHOWALD, PH
LIST, RS
WOICIK, J
PIANETTA, P
SPICER, WE
机构
来源
PHYSICAL REVIEW B | 1986年 / 34卷 / 10期
关键词
D O I
10.1103/PhysRevB.34.7069
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:7069 / 7075
页数:7
相关论文
共 23 条
[1]   EVALUATION OF SILICON FILMS AS A DIFFUSION MASK AND ENCAPSULANT FOR INP AND GAAS [J].
CHIN, AK ;
CAMLIBEL, I ;
MARCHUT, L ;
SINGH, S ;
VANUITERT, LG ;
ZYDZIK, GJ .
JOURNAL OF APPLIED PHYSICS, 1985, 58 (09) :3630-3633
[2]  
CHIN KJ, UNPUB
[3]   ELECTRON-ESCAPE DEPTHS IN GERMANIUM [J].
GANT, H ;
MONCH, W .
SURFACE SCIENCE, 1981, 105 (01) :217-224
[4]   NEW TIGHT-BINDING PARAMETERS FOR COVALENT SOLIDS OBTAINED USING LOUIE PERIPHERAL STATES [J].
HARRISON, WA .
PHYSICAL REVIEW B, 1981, 24 (10) :5835-5843
[5]   THEORY OF POLAR SEMICONDUCTOR SURFACES [J].
HARRISON, WA .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05) :1492-1496
[6]  
HARRISON WA, UNPUB J VAC SCI TECH
[7]   EFFECT OF AN AL INTERLAYER ON THE GAAS/GE(100) HETEROJUNCTION FORMATION [J].
KATNANI, AD ;
CHIARADIA, P ;
CHO, Y ;
MAHOWALD, P ;
PIANETTA, P ;
BAUER, RS .
PHYSICAL REVIEW B, 1985, 32 (06) :4071-4076
[8]   MICROSCOPIC STUDY OF SEMICONDUCTOR HETEROJUNCTIONS - PHOTOEMISSION MEASUREMENT OF THE VALANCE-BAND DISCONTINUITY AND OF THE POTENTIAL BARRIERS [J].
KATNANI, AD ;
MARGARITONDO, G .
PHYSICAL REVIEW B, 1983, 28 (04) :1944-1956
[9]  
KENDELEWICZ T, 1983, PHYS REV B, V27, P3366, DOI 10.1103/PhysRevB.27.3366
[10]  
LEY L, 1985, 17TH P INT C PHYS SE, P811