EFFECT OF AN AL INTERLAYER ON THE GAAS/GE(100) HETEROJUNCTION FORMATION

被引：14

作者：

KATNANI, AD ^{[1
]}

CHIARADIA, P ^{[1
]}

CHO, Y ^{[1
]}

MAHOWALD, P ^{[1
]}

PIANETTA, P ^{[1
]}

BAUER, RS ^{[1
]}

机构：

[1] XEROX CORP,PALO ALTO RES CTR,3333 COYOTE HILL RD,PALO ALTO,CA 94304

来源：

PHYSICAL REVIEW B | 1985年 / 32卷 / 06期

关键词：

D O I：

10.1103/PhysRevB.32.4071

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：4071 / 4076

页数：6

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