SCHOTTKY-BARRIER MODULATION AT METAL CONTACTS TO CDS AND CDSE

被引:18
作者
BRUCKER, CF [1 ]
BRILLSON, LJ [1 ]
KATNANI, AD [1 ]
STOFFEL, NG [1 ]
MARGARITONDO, G [1 ]
机构
[1] UNIV WISCONSIN,DEPT PHYS,MADISON,WI 53706
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1982年 / 21卷 / 02期
关键词
D O I
10.1116/1.571792
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:590 / 593
页数:4
相关论文
共 24 条
  • [1] TRANSITION IN SCHOTTKY-BARRIER FORMATION WITH CHEMICAL REACTIVITY
    BRILLSON, LJ
    [J]. PHYSICAL REVIEW LETTERS, 1978, 40 (04) : 260 - 263
  • [2] BROWN FC, 1975, VACUUM ULTRAVIOLET R, P785
  • [3] REACTIVE INTER-DIFFUSION AT METAL-CDS AND METAL-CDSE INTERFACES
    BRUCKER, CF
    BRILLSON, LJ
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 18 (03): : 787 - 791
  • [4] NEW METHOD FOR CONTROL OF SCHOTTKY-BARRIER HEIGHT
    BRUCKER, CF
    BRILLSON, LJ
    [J]. APPLIED PHYSICS LETTERS, 1981, 39 (01) : 67 - 69
  • [5] REACTIVE INTER-DIFFUSION AND ELECTRONIC BARRIERS AT METAL-CDS AND METAL-CDSE INTERFACES - CONTROL OF SCHOTTKY-BARRIER HEIGHT USING REACTIVE INTERLAYERS
    BRUCKER, CF
    BRILLSON, LJ
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03): : 617 - 622
  • [6] BRUCKER CF, THIN SOLID FILMS
  • [7] CRITIN PH, 1978, PHYS REV LETT, V41, P1425
  • [8] EASTMAN DE, 1980, PHYS REV LETT, V45, P656, DOI 10.1103/PhysRevLett.45.656
  • [9] ELECTRONIC-PROPERTIES OF HIGHLY-DOPED SI(111)-(1X1) SURFACES PREPARED BY LASER ANNEALING
    EASTMAN, DE
    HEIMANN, P
    HIMPSEL, FJ
    REIHL, B
    ZEHNER, DM
    WHITE, CW
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03): : 347 - 348
  • [10] PHOTOEMISSION STUDIES OF 2P CORE LEVELS OF PURE AND HEAVILY DOPED SILICON
    EBERHARDT, W
    KALKOFFEN, G
    KUNZ, C
    ASPNES, D
    CARDONA, M
    [J]. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 1978, 88 (01): : 135 - 143