New methods for fabricating step and flash imprint lithography templates

被引:2
作者
Resnick, DJ [1 ]
Bailey, TC [1 ]
Mancini, D [1 ]
Nordquist, KJ [1 ]
Dauksher, WJ [1 ]
Ainley, E [1 ]
Talin, A [1 ]
Gehoski, K [1 ]
Baker, JH [1 ]
Choi, BJ [1 ]
Johnson, S [1 ]
Colburn, M [1 ]
Meissl, M [1 ]
Sreenivasan, SV [1 ]
Ekerdt, JG [1 ]
Willson, CG [1 ]
机构
[1] Motorola Labs, Phys Sci Res Labs, Tempe, AZ 85284 USA
来源
NANOSTRUCTURE SCIENCE, METROLOGY AND TECHNOLOGY | 2002年
关键词
SFIL; imprint; lithography; templates;
D O I
10.1117/12.437269
中图分类号
V [航空、航天];
学科分类号
08 ; 0825 ;
摘要
Step and Flash Imprint Lithography (SFIL) is an attractive method: for printing sub-100 nm geometries. Relative to other imprinting processes SFIL has the advantage that the template is transparent, thereby facilitating conventional overlay techniques. The purpose of this work is to investigate alternative methods for defining features on an SFIL template. The first method used a much thinner (< 20 nm) layer of Cr as a hard mask. Thinner layers still suppress charging during e-beam exposure of the template, and have the advantage that CD losses encountered during the pattern transfer of the Cr are minimized. The second fabrication scheme addresses some of the weaknesses associated with a solid glass substrate. Because there is no conductive layer on the final template, SEM and defect inspection are compromised. By incorporating a conductive and transparent layer of indium tin oxide on the glass substrate, charging is suppressed during inspection, and the UV characteristics of the final template are not affected. Templates have been fabricated using the two methods described above. Features as small as 30 run have been resolved on the templates. Sub-80 tun features were resolved on the first test wafer printed.
引用
收藏
页码:176 / 181
页数:6
相关论文
共 9 条
[1]   Process optimization of a chemically amplified negative resist for electron beam exposure and mask making applications [J].
Ainley, E ;
Nordquist, K ;
Resnick, DJ ;
Carr, DW ;
Tiberio, RC .
MICROELECTRONIC ENGINEERING, 1999, 46 (1-4) :375-378
[2]   Step and flash imprint lithography: Template surface treatment and defect analysis [J].
Bailey, T ;
Choi, BJ ;
Colburn, M ;
Meissl, M ;
Shaya, S ;
Ekerdt, JG ;
Sreenivasan, SV ;
Willson, CG .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2000, 18 (06) :3572-3577
[3]  
CHOI BJ, ASPE 1999 ANN M
[4]  
Colburn M, 2001, SOLID STATE TECHNOL, V44, P67
[5]   Step and flash imprint lithography: A new approach to high-resolution patterning [J].
Colburn, M ;
Johnson, S ;
Stewart, M ;
Damle, S ;
Bailey, T ;
Choi, B ;
Wedlake, M ;
Michaelson, T ;
Sreenivasan, SV ;
Ekerdt, J ;
Willson, CG .
EMERGING LITHOGRAPHIC TECHNOLOGIES III, PTS 1 AND 2, 1999, 3676 :379-389
[6]   Plasma etching of Cr: A multiparameter uniformity study utilizing patterns of various Cr loads [J].
Constantine, C ;
Westerman, RJ ;
Plumhoff, J .
PHOTOMASK AND X-RAY MASK TECHNOLOGY VI, 1999, 3748 :153-157
[7]   Uniform low stress oxynitride films for application as hardmasks on x-ray masks [J].
Dauksher, WJ ;
Resnick, DJ ;
Smith, SM ;
Pendharkar, SV ;
Tompkins, HG ;
Cummings, KD ;
Seese, PA ;
Mangat, PJS ;
Chan, JA .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1997, 15 (06) :2232-2237
[8]  
SMITH KH, 2001, IN PRESS J VAS S NOV
[9]   Novel alignment system for imprint lithography [J].
White, DL ;
Wood, OR .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2000, 18 (06) :3552-3556