Performance of large-area silicon strip sensors for GLAST

被引：6

作者：

Yoshida, S ^{[1
]}

Masuda, H

Ohsugi, T

Fukazawa, Y

Yamanaka, K

Sadrozinski, HFW

Handa, T

Kavelaars, A

Brez, A

Bellazzini, R

Latronico, L

Yamamura, K

Yamamoto, K

Sato, K

机构：

[1] Hiroshima Univ, Higashihiroshima 7398526, Japan

[2] Hamamatsu Photon KK, Hamamatsu, Shizuoka 4358558, Japan

[3] Ist Nazl Fis Nucl, I-56010 Pisa, Italy

[4] Univ Pisa, I-56010 Pisa, Italy

[5] SLAC, Menlo Pk, CA 94025 USA

[6] Univ Calif Santa Barbara, SCIPP, Santa Barbara, CA 93106 USA

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2002年 / 49卷 / 03期

关键词：

GLAST; radiation damage; silicon strip detector;

D O I：

10.1109/TNS.2002.1039607

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on the performance of silicon strip sensors for GLAST, produced by Hamamatsu Photonics, Japan. The size of the sensors is 89.5 x 89.5 mm(2). They were processed on 6-in-high resistivity wafers. By now, more than 1000 of ultimately 11500, sensors have been produced, and 622 have been investigated in detail. The average leakage current density is, only, 3.4 nA/cm(2) at 25 degreesC. Such a low leakage current density enables us to screen out a sensor having few strips with high leakage current by looking at the total sensor leakage current instead of measuring individual strip currents. High breakdown voltage is also achieved. Often sensors investigated for high-voltage breakdown, all hold bias voltage up to 500 V without significant increase in the leakage current. The faulty strip rate is about 0.01% of 240 000 strips tested.

引用

页码：1017 / 1021

页数：5

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