Recombination dynamics of localized excitons in InGaN quantum dots

被引：59

作者：

Bartel, T ^{[1
]}

Dworzak, M ^{[1
]}

Strassburg, M ^{[1
]}

Hoffmann, A ^{[1
]}

Strittmatter, A ^{[1
]}

Bimberg, D ^{[1
]}

机构：

[1] Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany

来源：

APPLIED PHYSICS LETTERS | 2004年 / 85卷 / 11期

关键词：

D O I：

10.1063/1.1790599

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Indium-rich fluctuations in ultrathin InGaN layers act at low temperatures as a dense ensemble of quantum dots (QD). This leads to a complex potential landscape with localization sites of widely varying depth for excitons. We report on investigations of the recombination mechanisms of excitons localized in InGaN/GaN QD structures by time-resolved and spatially resolved photoluminescence (PL) measurements. The structures were grown by metal-organic chemical-vapor deposition on Si (111) substrates. Sharp lines originating from single QDs could be observed. Their PL decays show monoexponential behavior. Similar transition energies have different time constants. Thus, the well-known nonexponential PL decay of the QD ensemble is assigned to the summation of monoexponential decays originating from individual QDs with different exciton lifetimes. (C) 2004 American Institute of Physics.

引用

页码：1946 / 1948

页数：3

共 12 条

[1] Progress in GaN-based quantum dots for optoelectronics applications [J].

Arakawa, Y .

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2002, 8 (04) :823-832

[2]

Bimberg D., 1999, QUANTUM DOT HETEROST

[3] Room-temperature blue-green emission from InGaN/GaN quantum dots made by strain-induced islanding growth [J].

Damilano, B ;

Grandjean, N ;

Dalmasso, S ;

Massies, J .

APPLIED PHYSICS LETTERS, 1999, 75 (24) :3751-3753

[4] EXCITON TRANSFER BETWEEN LOCALIZED STATES IN CDS1-XSEX ALLOYS [J].

GOURDON, C ;

LAVALLARD, P .

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 1989, 153 (02) :641-652

[5]

Krestnikov IL, 2002, PHYS REV B, V66, DOI 10.1103/PhysRevB.66.155310

[6] Two-dimensional "pseudo-donor-acceptor-pairs" model of recombination dynamics in InGaN/GaN quantum wells [J].

Morel, A ;

Lefebvre, P ;

Taliercio, T ;

Bretagnon, T ;

Gil, B ;

Grandjean, N ;

Damilano, B ;

Massies, J .

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2003, 17 (1-4) :64-67

[7]

Nakamura S., 1997, BLUE LASER DIODE GAN

[8] Time-resolved photoluminescence measurements of quantum dots in InGaN multiple quantum wells and light-emitting diodes [J].

Pophristic, M ;

Long, FH ;

Tran, C ;

Ferguson, IT ;

Karlicek, RF .

JOURNAL OF APPLIED PHYSICS, 1999, 86 (02) :1114-1118

[9] Time-resolved dynamics in single InGaN quantum dots [J].

Robinson, JW ;

Rice, JH ;

Jarjour, A ;

Smith, JD ;

Taylor, RA ;

Oliver, RA ;

Briggs, GAD ;

Kappers, MJ ;

Humphreys, CJ ;

Arakawa, Y .

APPLIED PHYSICS LETTERS, 2003, 83 (13) :2674-2676

[10] TIME-SCALE INVARIANCE IN TRANSPORT AND RELAXATION [J].

SCHER, H ;

SHLESINGER, MF ;

BENDLER, JT .

PHYSICS TODAY, 1991, 44 (01) :26-34

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