Effects of growth temperature on Er-related photoluminescence in Er-doped InP and GaAs grown by organometallic vapor phase epitaxy with tertiarybutylphosphine and tertiarybutylarsine

The effects of growth temperature on Er-related photoluminescence (PL) have been investigated in Er-doped InP (InP:Er) and GaAs (GaAs:Er) grown by organometallic vapor phase epitaxy (OMVPE) using tertiarybutylphosphine (TBP) and tertiarybutylarsine (TBAs). In InP:Er, the PL spectra exhibit strong dependence on the growth temperature, and the intensity increases drastically in specimens prepared at temperatures lower than 550 degrees C. Similar dependence of PL intensity on the growth temperature is observed in GaAs:Er. The activation energy obtained is about 3 eV in both materials. The activation energy is discussed based on atomic configurations of Er-related luminescence centers.