Electron spin resonance study of interface defects in atomic layer deposited hafnium oxide on Si

被引:46
作者
Kang, AY [1 ]
Lenahan, PM
Conley, JF
Solanki, R
机构
[1] Penn State Univ, University Pk, PA 16802 USA
[2] Sharp Labs Amer, Camas, WA 98607 USA
[3] Oregon Grad Inst, Beaverton, OR 97006 USA
关键词
D O I
10.1063/1.1494123
中图分类号
O59 [应用物理学];
学科分类号
摘要
We report electron spin resonance (ESR) observation of interface defects at the HfO2/(111)Si boundary for HfO2 films deposited via atomic layer chemical vapor deposition using Hf(NO3)(4) as a precursor. We observe several signals, dominated by one due to a silicon dangling bond at the Si/dielectric interface. This center is somewhat similar to, but not identical to, Si/SiO2 interface silicon dangling bonds. Comparison between ESR and capacitance versus voltage measurements suggests that these dangling bond centers play an important role in HfO2/Si interface traps. (C) 2002 American Institute of Physics.
引用
收藏
页码:1128 / 1130
页数:3
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