Effect of growth kinetics on the structural and optical properties of quantum dot ensembles

被引:51
作者
Dubrovskii, VG
Cirlin, GE
Musikhin, YG
Samsonenko, YB
Tonkikh, AA
Polyakov, NK
Egorov, VA
Tsatsul'nikov, AF
Krizhanovskaya, NA
Ustinov, VM
Werner, P
机构
[1] Russian Acad Sci, AF Ioffe Phys Tech Inst, Heterostruct Lab, St Petersburg 194021, Russia
[2] Russian Acad Sci, Inst Analyt Instrumentat, St Petersburg 190083, Russia
[3] Russian Acad Sci, AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia
关键词
kinetics; molecular beam epitaxy; quantum dots;
D O I
10.1016/j.jcrysgro.2004.03.055
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
The growth kinetics influence on the structural and optical properties of quantum dot ensembles in the Ge/Si(1 0 0) and InAs/GaAs(1 0 0) heteroepitaxial systems is studied theoretically and experimentally. A kinetic model of the stress-driven formation of quantum dots is developed providing a description of the time evolution of island size and density depending on the growth temperature, on the growth rate and on the total amount of deposited material. The quantum dot ensembles in the Ge/Si and InAs/GaAs systems are grown by molecular beam epitaxy at different conditions and studied by applying atomic force microscopy, transmission electron microscopy and photoluminescence spectroscopy. Theoretical and experimental results provide a detailed quantitative characterization of quantum dot ensembles in terms of their size and density depending on the technologically controlled growth conditions and provide a way for a kinetically controlled engineering of quantum dot ensembles with the desired properties. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码:47 / 59
页数:13
相关论文
共 22 条
[1]   Growth and characterization of self-assembled Ge-rich islands on Si [J].
Abstreiter, G ;
Schittenhelm, P ;
Engel, C ;
Silveira, E ;
Zrenner, A ;
Meertens, D ;
Jager, W .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1996, 11 (11) :1521-1528
[2]  
Bimberg D., 1999, QUANTUM DOT HETEROST
[3]   Presentation and experimental validation of a single-band, constant-potential model for self-assembled InAs/GaAs quantum dots [J].
Califano, M ;
Harrison, P .
PHYSICAL REVIEW B, 2000, 61 (16) :10959-10965
[4]   Ordering of nanostructures in a Si/Ge0.3Si0.7/Ge system during molecular beam epitaxy [J].
Cirlin, GE ;
Egorov, VA ;
Sokolov, LV ;
Werner, P .
SEMICONDUCTORS, 2002, 36 (11) :1294-1298
[5]   Dislocation-free island formation in heteroepitaxial growth: A study at equilibrium [J].
Daruka, I ;
Barabasi, AL .
PHYSICAL REVIEW LETTERS, 1997, 79 (19) :3708-3711
[6]   Kinetics of the initial stage of coherent island formation in heteroepitaxial systems [J].
Dubrovskii, VG ;
Cirlin, GE ;
Ustinov, VM .
PHYSICAL REVIEW B, 2003, 68 (07)
[7]  
DUBROVSKII VG, 2003, PHYS STATUS SOLIDI B, P238
[8]   Evolution of coherent islands in Si1-xGex/Si(001) [J].
Floro, JA ;
Chason, E ;
Freund, LB ;
Twesten, RD ;
Hwang, RQ ;
Lucadamo, GA .
PHYSICAL REVIEW B, 1999, 59 (03) :1990-1998
[9]  
GERARD JM, 1995, CONFINED ELECT PHOTO
[10]   Effect of growth rate on the size, composition, and optical properties of InAs/GaAs quantum dots grown by molecular-beam epitaxy [J].
Joyce, PB ;
Krzyzewski, TJ ;
Bell, GR ;
Jones, TS ;
Malik, S ;
Childs, D ;
Murray, R .
PHYSICAL REVIEW B, 2000, 62 (16) :10891-10895