Ordering of nanostructures in a Si/Ge0.3Si0.7/Ge system during molecular beam epitaxy

被引：11

作者：

Cirlin, GE ^{[1
]}

Egorov, VA

Sokolov, LV

Werner, P

机构：

[1] Russian Acad Sci, Inst Analyt Instrumentat, St Petersburg 198063, Russia

[2] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

[3] Max Planck Inst Mikrostrukturphys, D-06120 Halle Saale, Germany

[4] Russian Acad Sci, Inst Semicond Phys, Siberian Div, Novosibirsk 630090, Russia

来源：

SEMICONDUCTORS | 2002年 / 36卷 / 11期

关键词：

D O I：

10.1134/1.1521233

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The structural properties of nanoobjects in a heteroepitaxial Si/Ge0.3Si0.7/Ge system have been studied using atomic-force microscopy. The formation of nanometer islands occurs at a lower Ge thickness than in the case of Si/Ge heteroepitaxy. The effects of the spatial ordering of the nanostructures are found: the formation of groups of hut-clusters around craters at the initial stage of the formation of 3D objects, and the alignment of dome-clusters in rows as the amount of deposited Ge rises. (C) 2002 MAIK "Nauka / Interperiodica".

引用

页码：1294 / 1298

页数：5

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