Long-range ordered lines of self-assembled Ge islands on a flat Si (001) surface

被引：140

作者：

Schmidt, OG

Jin-Phillipp, NY

Lange, C

Denker, U

Eberl, K

Schreiner, R

Gräbeldinger, H

Schweizer, H

机构：

[1] Max Planck Inst Festkorperforsch, D-70569 Stuttgart, Germany

[2] Univ Stuttgart, Inst Phys 4, D-70550 Stuttgart, Germany

来源：

APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 25期

关键词：

D O I：

10.1063/1.1326842

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Self-assembled growth in combination with prepatterning yields ordered lines of Ge islands on a planar Si (001) surface. The self-assembled Ge nanostructures are grown on top of a 15-period Si/SiGe superlattice, which is deposited on a prepatterned Si substrate. The pattern consists of 10 nm deep trenches with a period of 250 nm. The superlattice translates the surface modulation of the substrate into a strain-field modulation at the growth front of the superlattice. This strain field modulation provides the template for the ordered nucleation of self-assembled Ge islands. Our method gives rise to the long-range ordering of perfectly passivated nanostructures and can in principle be applied to any other strained material system. (C) 2000 American Institute of Physics. [S0003-6951(00)00747-6].

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页码：4139 / 4141

页数：3

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