Band-edge transitions of a metallorganic chemical vapor deposited ZnO film on Si by thermoreflectance spectroscopy

被引:3
作者
Ho, C. H. [1 ]
Liang, Y. H. [1 ]
Chen, Y. J. [1 ]
机构
[1] Natl Dong Hwa Univ, Dept Mat Sci & Engn, Shoufeng 974, Hualien, Taiwan
关键词
D O I
10.1149/1.2256991
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
Optical properties of the band-edge transitions of a ZnO film deposited on silicon substrate (ZnO/Si) were characterized using thermoreflectance (TR) measurements in the temperature range between 35 and 340 K. The TR spectrum of the zinc oxide film clearly showed many transition features present at energies near 3.4 eV at 35 K. The observed TR features correspond to the A, B, and C excitonic series in the wurtzite ZnO. Transition energies of the A, B, C excitonic series were analyzed by a detailed line-shape fit to the TR spectrum. The Rydberg constant and threshold energy for each A, B, and C excitonic series were determined. Temperature dependence of the transition energies of the A, B, and C series were analyzed. The parameters that describe the temperature variations of the excitonic transitions in the ZnO film were evaluated and discussed. (c) 2006 The Electrochemical Society.
引用
收藏
页码:G312 / G315
页数:4
相关论文
共 24 条
[1]  
Aspnes D. E., 1980, HDB SEMICONDUCTORS
[2]   ELECTROREFLECTANCE AT A SEMICONDUCTOR-ELECTROLYTE INTERFACE [J].
CARDONA, M ;
SHAKLEE, KL ;
POLLAK, FH .
PHYSICAL REVIEW, 1967, 154 (03) :696-+
[3]   Photoreflectance spectra of a ZnO heteroepitaxial film on the nearly lattice-matched ScAlMgO4 (0001) substrate grown by laser molecular-beam epitaxy [J].
Chichibu, SF ;
Tsukazaki, A ;
Kawasaki, M ;
Tamura, K ;
Segawa, Y ;
Sota, T ;
Koinuma, H .
APPLIED PHYSICS LETTERS, 2002, 80 (16) :2860-2862
[4]   Band parameters and electronic structures of wurtzite ZnO and ZnO/MgZnO quantum wells [J].
Fan, WJ ;
Xia, JB ;
Agus, PA ;
Tan, ST ;
Yu, SF ;
Sun, XW .
JOURNAL OF APPLIED PHYSICS, 2006, 99 (01)
[5]   Optical and photoelectrical properties of ZnO thin films and the effects of annealing [J].
Henseler, MJH ;
Lee, WCT ;
Miller, P ;
Durbin, SM ;
Reeves, RJ .
JOURNAL OF CRYSTAL GROWTH, 2006, 287 (01) :48-53
[6]   Thermoreflectance study of the electronic structure of Ge(Se1-xSx)2 -: art. no. 125313 [J].
Ho, CH ;
Lin, SL ;
Wu, CC .
PHYSICAL REVIEW B, 2005, 72 (12)
[7]   Practical thermoreflectance design for optical characterization of layer semiconductors [J].
Ho, CH ;
Lee, HW ;
Cheng, ZH .
REVIEW OF SCIENTIFIC INSTRUMENTS, 2004, 75 (04) :1098-1102
[8]   Luminescence of bound excitons in epitaxial ZnO thin films grown by plasma-assisted molecular beam epitaxy [J].
Jung, YS ;
Choi, WK ;
Kononenko, OV ;
Panin, GN .
JOURNAL OF APPLIED PHYSICS, 2006, 99 (01)
[9]   Ab initio calculation of excitons in ZnO [J].
Laskowski, R ;
Christensen, NE .
PHYSICAL REVIEW B, 2006, 73 (04)
[10]   Temperature dependence of the energies and broadening parameters of the interband excitonic transitions in wurtzite GaN [J].
Li, CF ;
Huang, YS ;
Malikova, L ;
Pollak, FH .
PHYSICAL REVIEW B, 1997, 55 (15) :9251-9254