Close to midgap trapping level in 60Co gamma irradiated silicon detectors

被引：50

作者：

Pintilie, I

Fretwurst, E

Lindström, G

Stahl, J

机构：

[1] Natl Inst Mat Phys, Bucharest, Romania

[2] Univ Hamburg, Inst Expt Phys, D-22761 Hamburg, Germany

来源：

APPLIED PHYSICS LETTERS | 2002年 / 81卷 / 01期

关键词：

D O I：

10.1063/1.1490397

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The deep level transient spectroscopy method was applied on standard and oxygenated float-zone silicon detectors exposed to high doses of Co-60-gamma irradiation. We have detected and characterized a close to midgap trapping level having an ionization energy of E-C-(0.545+/-0.005) eV and electron/hole capture cross sections of sigma(n)=(1.7+/-0.2)x10(-15) cm(2)/sigma(p)=(9+/-1)x10(-14) cm(2) respectively. This level has a strong impact on the detector performance being responsible for more than 90% of the change in the effective doping concentration. The defect is strongly oxygen related and a possible connection with the V2O complex is discussed. (C) 2002 American Institute of Physics.

引用

页码：165 / 167

页数：3

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