Electronic properties of zinc-blende ScxGa1-xN

被引：17

作者：

Ben Fredj, A.

Oussaifi, Y.

Bouarissa, N.

Said, M.

机构：

[1] Fac Sci Monastir, Unite Phys Solides, Monastir 5019, Tunisia

[2] King Khalid Univ, Fac Sci, Dept Phys, Abha, Saudi Arabia

来源：

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2006年 / 243卷 / 12期

关键词：

D O I：

10.1002/pssb.200541493

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 [凝聚态物理];

摘要：

Using the empirical pseudopotential approach, we have investigated the electronic properties of GaN, ScN and their hypothetical alloys ScxGa1-xN in the zinc-blende structure. The band gaps at Gamma-, X- and L-points as well as the electron effective masses of Gamma and X valleys were calculated as a function of scandium molar fraction x. The agreement between our results and the available experimental and previously calculated data is fair. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

收藏

页码：2780 / 2787

页数：8

相关论文

共 38 条

[1]

Molecular beam epitaxial growth of atomically smooth scandium nitride films [J].

Al-Brithen, H ;

Smith, AR .

APPLIED PHYSICS LETTERS, 2000, 77 (16) :2485-2487

[2]

ELECTRONIC-STRUCTURE AND EQUILIBRIUM PROPERTIES OF GAXAL1-XN ALLOYS [J].

ALBANESI, EA ;

LAMBRECHT, WRL ;

SEGALL, B .

PHYSICAL REVIEW B, 1993, 48 (24) :17841-17847

[3]

Structure and optical properties of ScN thin films [J].

Bai, XW ;

Kordesch, ME .

APPLIED SURFACE SCIENCE, 2001, 175 :499-504

[4]

BAI XW, 2000, THESIS OHIO U ATHENS

[5]

ELECTRONIC-STRUCTURE OF ZNS, ZNSE, ZNTE, AND THEIR PSEUDOBINARY ALLOYS [J].

BERNARD, JE ;

ZUNGER, A .

PHYSICAL REVIEW B, 1987, 36 (06) :3199-3228

[6]

Electronic band parameters for zinc-blende Al1-xGaxN [J].

Bhouri, A ;

Ben Zid, F ;

Mejri, H ;

Ben Fredj, A ;

Bouarissa, N ;

Said, M .

JOURNAL OF PHYSICS-CONDENSED MATTER, 2002, 14 (29) :7017-7026

[7]

Energy gaps and optical phonon frequencies in InP1-xSbx [J].

Bouarissa, N ;

Bougouffa, S ;

Kamli, A .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2005, 20 (03) :265-270

[8]

Effects of compositional disorder upon electronic and lattice properties of GaxIn1-xAs [J].

Bouarissa, N .

PHYSICS LETTERS A, 1998, 245 (3-4) :285-291

[9]

The disorder effect on the electron and positron structure in the semiconductor alloy InxGa1-xSb [J].

Bouarissa, N ;

Aourag, H .

SOLID STATE COMMUNICATIONS, 1997, 101 (03) :205-210

[10]

The effect of compositional disorder on electronic band structure in GaxIn1-xAsySb1-y alloys lattice matched to GaSb [J].

Bouarissa, N .

SUPERLATTICES AND MICROSTRUCTURES, 1999, 26 (04) :279-287

← 1 2 3 4 →