Molecular beam epitaxial growth of atomically smooth scandium nitride films

被引：78

作者：

Al-Brithen, H ^{[1
]}

Smith, AR ^{[1
]}

机构：

[1] Ohio Univ, Dept Phys & Astron, Athens, OH 45701 USA

来源：

APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 16期

关键词：

D O I：

10.1063/1.1318227

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High quality scandium nitride films have been grown on magnesium oxide (001) substrates by molecular beam epitaxy using a rf plasma source for nitrogen. Both reflection high energy electron diffraction and x-ray diffraction confirm that these films have (001)-orientation. Atomic force microscopy reveals a surface morphology consisting of large plateaus and pyramids. The plateaus are found to be atomically smooth and have a 1x1 surface structure, as revealed by in situ scanning tunneling microscopy. (C) 2000 American Institute of Physics. [S0003-6951(00)00142-X].

引用

页码：2485 / 2487

页数：3

共 10 条

[1]

DISMUKES JP, 1996, P ELECTROCHEM SOC, V9611, P111

[2]

DISMUKES P, 1972, J CRYST GROWTH, V13, P365

[3] Microstructure and electronic properties of the refractory semiconductor ScN grown on Mg0(001) by ultra-high-vacuum reactive magnetron sputter deposition [J].