Controlled growth of ultrathin Mo2C superconducting crystals on liquid Cu surface

被引:143
作者
Geng, Dechao [1 ,2 ]
Zhao, Xiaoxu [1 ,2 ]
Li, Linjun [1 ,2 ]
Song, Peng [1 ,2 ]
Tian, Bingbing [1 ,2 ]
Liu, Wei [1 ,2 ]
Chen, Jianyi [1 ,2 ]
Shi, Dong [1 ,2 ]
Lin, Ming [3 ]
Zhou, Wu [4 ,5 ]
Loh, Kian Ping [1 ,2 ]
机构
[1] Natl Univ Singapore, Dept Chem, 3 Sci Dr 3, Singapore 17543, Singapore
[2] Natl Univ Singapore, Graphene Res Ctr, 3 Sci Dr 3, Singapore 17543, Singapore
[3] ASTAR, Inst Mat Res & Engn, 2 Fusionopolis Way,08-03 Innovis, Singapore 138634, Singapore
[4] Oak Ridge Natl Lab, Mat Sci & Technol Div, Oak Ridge, TN 37831 USA
[5] Univ Chinese Acad Sci, CAS Key Lab Vacuum Phys, Sch Phys Sci, Beijing 100049, Peoples R China
基金
新加坡国家研究基金会;
关键词
ultrathin Mo2C; superconducting; liquid Cu; chemical vapor deposition; EPITAXIAL-GROWTH; CARBIDE;
D O I
10.1088/2053-1583/aa51b7
中图分类号
T [工业技术];
学科分类号
120111 [工业工程];
摘要
Exhibiting thickness-dependent change in the critical temperature (T-c) for the onset of superconductivity, Mo2C has emerged as an important new member in the family of two-dimensional atomic crystals. Controllable growth in terms of morphology and thickness is necessary to elucidate its intrinsic properties at the 2D limit. Here we demonstrate the chemical vapor deposition of ultrathin Mo2C crystals on liquid Cu surface where the morphology of the crystals can be controlled by tuning the carbon supersaturation. A unique staggered carbon vacancy ordering is discovered in Mo2C crystals having particular geometries. Thickness engineering of the crystal can be achieved by controlling the thickness of the Cu catalyst layer, which affords a facile route to grow ultrathin 2D samples. Ultrathin Mo2C crystals so obtained, have been characterized using aberration corrected scanning transmission electron microscopy annular dark field imaging, where the co-existence of both AA and AB stacking modes is observed. The high crystallinity of the Mo2C crystals synthesized in this work is attested by its characteristic sharp superconducting transition.
引用
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页数:9
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