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Synthesis of β-Ga2O3 nanowires by laser ablation

被引：104
作者：
Hu, JQ
Li, Q
Meng, XM
Lee, CS
Lee, ST
机构：
[1] City Univ Hong Kong, Ctr Super Diamond & Adv Films, Kowloon, Hong Kong, Peoples R China
[2] City Univ Hong Kong, Dept Phys & Mat Sci, Kowloon, Hong Kong, Peoples R China
来源：
JOURNAL OF PHYSICAL CHEMISTRY B | 2002年 / 106卷 / 37期
关键词：
D O I：
10.1021/jp020734t
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
A simple laser ablation method has been employed for the synthesis of beta-Ga2O3 nanowires. The as-synthesized products were characterized by X-ray powder diffraction (XRD), transmission electron microscopy (TEM), and room-temperature photoluminescence. The synthesized beta-Ga2O3 nanowires have diameters of 15-50 nm and lengths up to several micrometers, and a few of the nanowires appear to have ring-shaped structures. Photoluminescence of the bulk beta-Ga2O3 nanowires shows a stable and broad green emission band centered at 497 nm, which has a blueshift of 30 nm from beta-Ga2O3 powder. Possible growth mechanisms of the beta-Ga2O3 nanowires are briefly discussed.
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收藏
页码：9536 / 9539
页数：4
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