Towards the integration of carbon nanotubes in microelectronics

被引：74

作者：

Graham, AP ^{[1
]}

Duesberg, GS ^{[1
]}

Seidel, R ^{[1
]}

Liebau, M ^{[1
]}

Unger, E ^{[1
]}

Kreupl, F ^{[1
]}

Hönlein, W ^{[1
]}

机构：

[1] Infineon Technol AG, Corp Res CPR NP, D-81739 Munich, Germany

来源：

关键词：

nanotubes; chemical vapour deposition; electrical properties; electronic device structures;

D O I：

10.1016/j.diamond.2003.10.080

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The remarkable properties of carbon nanotubes (CNTs) make them especially interesting for microelectronic applications including interconnects and devices. The parallel integration of CNTs into circuits using microelectronics compatible processes is critical for their future application and implies the simultaneous processing of billions of CNTs. We present our concepts for CNT-based interconnects and vertical, surrounding-gate transistors for large-scale integration. In order to realise this, the precise placement of CNTs with lithographic methods and the controlled production of CNTs with defined properties is necessary. We demonstrate vertical interconnects (vias) made from multi-walled nanotubes and their electrical characteristics. Further, we show the CVD growth of single, isolated single-walled and multi-walled CNTs at lithographically defined locations suitable for single CNT devices. Self-aligned, single-walled CNT transistors have also been realised and their electrical performance characterised. (C) 2003 Elsevier B.V. All rights reserved.

引用

页码：1296 / 1300

页数：5

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