Ferromagnetic resonance in (Ga,Mn)As

被引：16

作者：

Rubinstein, M ^{[1
]}

Hanbicki, A ^{[1
]}

Lubitz, P ^{[1
]}

Osofsky, M ^{[1
]}

Krebs, JJ ^{[1
]}

Jonker, B ^{[1
]}

机构：

[1] USN, Res Lab, Washington, DC 20375 USA

来源：

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 2002年 / 250卷 / 1-3期

关键词：

magnetic semiconductor; GaMnAs; FMR;

D O I：

10.1016/S0304-8853(02)00376-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Dilute magnetic semiconductors exhibit unique magnetic and transport properties which arise from the coupling of carrier spins and local moments. We have studied the ferromagnetic resonance spectra in ferromagnetic Mn-doped GaAs (with Mn concentrations similar to4-6%), whose properties are strongly influenced by this coupling. The resonance fields were found to have an anomalous temperature dependence, which we attribute to the development of a "bottleneck" between the two types of spins. The gyromagnetic ratio of hole spins in this p-type ferromagnetic semiconductor was found to be negative, with g similar to -0.5. At low temperatures, additional anisotropy appears, which we have attributed to the trapping of itinerant holes by the core spins. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：164 / 169

页数：6

共 23 条

[11]

2-1

[12] Properties of ferromagnetic III-V semiconductors [J].