Back-Contacted Silicon Heterojunction Solar Cells With Efficiency >21%

被引：62

作者：

Tomasi, Andrea ^{[1
]}

Paviet-Salomon, Bertrand ^{[1
]}

Lachenal, Damien ^{[2
]}

de Nicolas, Silvia Martin ^{[1
]}

Descoeudres, Antoine ^{[3
]}

Geissbuehler, Jonas ^{[1
]}

De Wolf, Stefaan ^{[1
]}

Ballif, Christophe ^{[1
]}

机构：

[1] Ecole Polytech Fed Lausanne, Inst Microengn, Photovolta & Thin Film Elect Lab, CH-2000 Neuchatel, Switzerland

[2] Roth & Rau Res AG, CH-2068 Neuchatel, Switzerland

[3] Ctr Suisse Elect & Microtech SA, PV Ctr, CH-2000 Neuchatel, Switzerland

来源：

IEEE JOURNAL OF PHOTOVOLTAICS | 2014年 / 4卷 / 04期

基金：

瑞士国家科学基金会;

关键词：

Amorphous silicon; crystalline silicon (c-Si); heterojunctions; photovoltaic cells; solar cells; POWER-LOSS; RESISTANCE; PERFORMANCE;

D O I：

10.1109/JPHOTOV.2014.2320586

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

We report on the fabrication of back-contacted silicon heterojunction solar cells with conversion efficiencies above 21%. Our process technology relies solely on simple and size-scalable patterning methods, with no high-temperature steps. Using in situ shadow masks, doped hydrogenated amorphous silicon layers are patterned into two interdigitated combs. Transparent conductive oxide and metal layers, forming the back electrodes, are patterned by hotmelt inkjet printing. With this process, we obtain high short-circuit current densities close to 40 mA/cm(2) and open-circuit voltages exceeding 720 mV, leading to a conversion efficiency of 21.5%. However, moderate fill factor values limit our current device efficiencies. Unhindered carrier transport through both heterocontact layer stacks, as well as higher passivation quality over the minority carrier-injection range relevant for solar cell operation, are identified as key factors for improved fill factor values and device performance.

引用

页码：1046 / 1054

页数：9

共 56 条

[1]

[Anonymous], 2014, PAN IIT SOL CELL ACH

[2] MODELS FOR CONTACTS TO PLANAR DEVICES [J].

BERGER, HH .

SOLID-STATE ELECTRONICS, 1972, 15 (02) :145-&

[3] Numerical analysis of electrical TCO/a-Si:H(p) contact properties for silicon heterojunction solar cells [J].

Bivour, Martin ;

Schroeer, Sebastian ;

Hermle, Martin .

PROCEEDINGS OF THE 3RD INTERNATIONAL CONFERENCE ON CRYSTALLINE SILICON PHOTOVOLTAICS (SILICONPV 2013), 2013, 38 :658-669

[4] Simulation of contact schemes for silicon heterostructure rear contact solar cells [J].

Chen, Yi-Yang ;

Korte, Lars ;

Leendertz, Caspar ;

Haschke, Jan ;

Gan, Jon-Yiew ;

Wu, Der-Chin .

PROCEEDINGS OF THE 3RD INTERNATIONAL CONFERENCE ON CRYSTALLINE SILICON PHOTOVOLTAICS (SILICONPV 2013), 2013, 38 :677-683

[5]

Chowdhury ZR, 2012, 2012 38TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC), P1026, DOI 10.1109/PVSC.2012.6317777

[6] GENERATION 3: IMPROVED PERFORMANCE AT LOWER COST [J].

Cousins, Peter J. ;

Smith, David D. ;

Luan, Hsin-Chiao ;

Manning, Jane ;

Dennis, Tim D. ;

Waldhauer, Ann ;

Wilson, Karen E. ;

Harley, Gabriel ;

Mulligan, William P. .

35TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE, 2010, :275-278

[7]

Das U, 2013, IEEE PHOT SPEC CONF, P1224, DOI 10.1109/PVSC.2013.6744360

[8] Point Contact Technology for Silicon Heterojunction Solar Cells [J].

De Vecchi, S. ;

Desrues, T. ;

Souche, F. ;

Munoz, D. ;

Ribeyron, P. -J. ;

Lemiti, M. .

PROCEEDINGS OF THE 2ND INTERNATIONAL CONFERENCE ON CRYSTALLINE SILICON PHOTOVOLTAICS (SILICONPV 2012), 2012, 27 :549-554

[9] Laser assisted patterning of hydrogenated amorphous silicon for Interdigitated Back Contact Silicon Heterojunction Solar Cell [J].

De Vecchi, S. ;

Desrues, T. ;

Souche, F. ;

Munoz, D. ;

Lemiti, M. .

LASER MATERIAL PROCESSING FOR SOLAR ENERGY, 2012, 8473

[10]

De Wolf Stefaan, 2012, Green, V2, P7, DOI 10.1515/green-2011-0018

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Back-Contacted Silicon Heterojunction Solar Cells With Efficiency &gt;21%

Back-Contacted Silicon Heterojunction Solar Cells With Efficiency >21%