Numerical analysis of electrical TCO/a-Si:H(p) contact properties for silicon heterojunction solar cells

被引：83

作者：

Bivour, Martin ^{[1
]}

Schroeer, Sebastian ^{[1
]}

Hermle, Martin ^{[1
]}

机构：

[1] Fraunhofer Inst Solar Energy Syst ISE, D-79110 Freiburg, Germany

来源：

PROCEEDINGS OF THE 3RD INTERNATIONAL CONFERENCE ON CRYSTALLINE SILICON PHOTOVOLTAICS (SILICONPV 2013) | 2013年 / 38卷

关键词：

silicon heterojunction; fill factor; tunneling; TCO; work function; loss analysis; HYDROGENATED AMORPHOUS-SILICON; TRANSPARENT CONDUCTING OXIDES; WORK FUNCTION; FERMI-LEVEL; EMITTER;

D O I：

10.1016/j.egypro.2013.07.330

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

In this paper we present a one-dimensional numerical simulation study concerning the electrical properties of the TCO / a-Si: H(p) / a-Si: H(i) / c-Si(n) hole contact in amorphous / crystalline silicon heterojunction (SHJ) solar cells. Simulations where performed with Sentaurus TCAD from Synopsys considering the implemented barrier tunneling model. The modification of the a-Si: H(p) / a-Si: H(i) / c-Si(n) p/n junction by the opposing TCO / a-Si: H(p) junction and its influence on the device recombination for the relevant working conditions are investigated. We demonstrate the relevance of the effective screening length in the amorphous silicon, which depends on the effective space-charge in the a-Si: H(p) and the work function mismatch at the TCO / a-Si: H(p) interface. We highlight the importance of an improved work function matching as this presents an additional degree of freedom for the design of the SHJ and is an important parameter to reach both a very high V-oc and FF. (C) 2013 The Authors. Published by Elsevier Ltd.

引用

页码：658 / 669

页数：12

共 35 条

[1] COMPUTER-ANALYSIS OF THE ROLE OF P-LAYER QUALITY, THICKNESS, TRANSPORT MECHANISMS, AND CONTACT BARRIER HEIGHT IN THE PERFORMANCE OF HYDROGENATED AMORPHOUS-SILICON P-I-N SOLAR-CELLS [J].

ARCH, JK ;

RUBINELLI, FA ;

HOU, JY ;

FONASH, SJ .

JOURNAL OF APPLIED PHYSICS, 1991, 69 (10) :7057-7066

[2] Hydrogen-doped indium oxide/indium tin oxide bilayers for high-efficiency silicon heterojunction solar cells [J].

Barraud, L. ;

Holman, Z. C. ;

Badel, N. ;

Reiss, P. ;

Descoeudres, A. ;

Battaglia, C. ;

De Wolf, S. ;

Ballif, C. .

SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2013, 115 :151-156

[3] Improving the a-Si:H(p) rear emitter contact of n-type silicon solar cells [J].

Bivour, Martin ;

Reichel, Christian ;

Hermle, Martin ;

Glunz, Stefan W. .

SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2012, 106 :11-16

[4] High mobility transparent conducting oxides for thin film solar cells [J].

Calnan, S. ;

Tiwari, A. N. .

THIN SOLID FILMS, 2010, 518 (07) :1839-1849

[5]

Chen S, 2012, J MATER CHEM, V22, P24202, DOI [10.1039/c2m33838f, 10.1039/c2jm33838f]

[6] Optimisation of doped amorphous silicon layers applied to heterojunction solar cells [J].

de Nicolas, S. Martin ;

Munoz, D. ;

Ozanne, A. S. ;

Nguyen, N. ;

Ribeyron, P. J. .

PROCEEDINGS OF THE SILICONPV 2011 CONFERENCE (1ST INTERNATIONAL CONFERENCE ON CRYSTALLINE SILICON PHOTOVOLTAICS), 2011, 8 :226-231

[7]

De Wolf S., 2012, GREEN

[8] B-doped a-Si:H contact improvement on silicon heterojunction solar cells and interdigitated back contact structure [J].

Desrues, T. ;

Ribeyron, P. -J. ;

Vandeneynde, A. ;

Ozanne, A. -S. ;

Souche, F. ;

Munoz, D. ;

Denis, C. ;

Diouf, D. ;

Kleider, J. -P. .

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7 NO 3-4, 2010, 7 (3-4) :1011-1015

[9] Effects of a-Si:H layer thicknesses on the performance of a-Si:H/c-Si heterojunction solar cells [J].

Fujiwara, Hiroyuki ;

Kondo, Michio .

JOURNAL OF APPLIED PHYSICS, 2007, 101 (05)

[10]

Holman Z. C., 2012, PHOTOVOLTAICS IEEE J, V2, P7

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