Hydrogen-doped indium oxide/indium tin oxide bilayers for high-efficiency silicon heterojunction solar cells

被引：159

作者：

Barraud, L. ^{[1
]}

Holman, Z. C. ^{[1
]}

Badel, N. ^{[1
]}

Reiss, P. ^{[1
,2
]}

Descoeudres, A. ^{[1
]}

Battaglia, C. ^{[1
]}

De Wolf, S. ^{[1
]}

Ballif, C. ^{[1
]}

机构：

[1] EPFL, Inst Microengn IMT, Photovolta & Thin Film Elect Lab, CH-2000 Neuchatel, Switzerland

[2] Helmholtz Zentrum Berlin Mat & Energie, D-12489 Berlin, Germany

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2013年 / 115卷

关键词：

Silicon heterojunction; Solar cell; Transparent conductive oxide; Indium tin oxide; Indium oxide; Contact resistance; TRANSPARENT CONDUCTIVE OXIDE; SILVER NANOPARTICLES; AMORPHOUS-SILICON; WORK FUNCTION; THIN-FILMS; IN2O3;

D O I：

10.1016/j.solmat.2013.03.024

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

The front transparent conductive oxide layer is a source of significant optical and electrical losses in silicon heterojunction solar cells because of the trade-off between free-carrier absorption and sheet resistance. We demonstrate that hydrogen-doped indium oxide (IO:H), which has an electron mobility of over 100 cm(2)/V s, reduces these losses compared to traditional, low-mobility transparent conductive oxides, but suffers from high contact resistance at the interface of the IO:H layer and the silver front electrode grid. This problem is avoided by inserting a thin indium tin oxide (ITO) layer at the IO:H/silver interface. Such IO:H/ITO bilayers have low contact resistance, sheet resistance, and free-carrier absorption, and outperform IO:H-only or ITO-only layers in solar cells. We report a certified efficiency of 22.1% for a 4-cm(2) screen-printed silicon heterojunction solar cell employing an 10:H/ITO bilayer as the front transparent conductive oxide. (C) 2013 Elsevier B.V. All rights reserved.

引用

页码：151 / 156

页数：6

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