Improved amorphous/crystalline silicon interface passivation by hydrogen plasma treatment

被引：243

作者：

Descoeudres, A. ^{[1
]}

Barraud, L. ^{[1
]}

De Wolf, Stefaan ^{[1
]}

Strahm, B. ^{[2
]}

Lachenal, D. ^{[2
]}

Guerin, C. ^{[2
]}

Holman, Z. C. ^{[1
]}

Zicarelli, F. ^{[1
]}

Demaurex, B. ^{[1
]}

Seif, J. ^{[1
]}

Holovsky, J. ^{[3
]}

Ballif, C. ^{[1
]}

机构：

[1] Ecole Polytech Fed Lausanne EPFL, Inst Microengn IMT, Photovolta & Thin Film Elect Lab, CH-2000 Neuchatel, Switzerland

[2] Roth & Rau Switzerland SA, CH-2000 Neuchatel, Switzerland

[3] Acad Sci Czech Republic, Inst Phys, Prague 16253 6, Czech Republic

来源：

APPLIED PHYSICS LETTERS | 2011年 / 99卷 / 12期

关键词：

AMORPHOUS-SILICON; SOLAR-CELLS; SPECTROSCOPIC ELLIPSOMETRY;

D O I：

10.1063/1.3641899

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Silicon heterojunction solar cells have high open-circuit voltages thanks to excellent passivation of the wafer surfaces by thin intrinsic amorphous silicon (a-Si:H) layers deposited by plasma-enhanced chemical vapor deposition. We show a dramatic improvement in passivation when H-2 plasma treatments are used during film deposition. Although the bulk of the a-Si:H layers is slightly more disordered after H-2 treatment, the hydrogenation of the wafer/film interface is nevertheless improved with as-deposited layers. Employing H-2 treatments, 4 cm(2) heterojunction solar cells were produced with industry-compatible processes, yielding open-circuit voltages up to 725 mV and aperture area efficiencies up to 21%. (C) 2011 American Institute of Physics. [doi:10.1063/1.3641899]

引用

页数：3

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