Micromorph thin-film silicon solar cells with transparent high-mobility hydrogenated indium oxide front electrodes

被引:41
作者
Battaglia, Corsin [1 ]
Erni, Lukas [1 ]
Boccard, Mathieu [1 ]
Barraud, Loris [1 ]
Escarre, Jordi [1 ]
Soederstroem, Karin [1 ]
Bugnon, Gregory [1 ]
Billet, Adrian [1 ]
Ding, Laura [1 ]
Despeisse, Matthieu [1 ]
Haug, Franz-Josef [1 ]
De Wolf, Stefaan [1 ]
Ballif, Christophe [1 ]
机构
[1] Ecole Polytech Fed Lausanne EPFL, Inst Microengineering IMT, Photovolta & Thin Film Elect Lab, CH-2000 Neuchatel, Switzerland
基金
瑞士国家科学基金会;
关键词
AMORPHOUS-SILICON; CONDUCTIVE OXIDE; DOPED IN2O3; ELLIPSOMETRY; GROWTH; HAZE;
D O I
10.1063/1.3592885
中图分类号
O59 [应用物理学];
学科分类号
摘要
We investigate the performance of hydrogenated indium oxide as a transparent front electrode for micromorph thin-film silicon solar cells on glass. Light trapping is achieved by replicating the morphology of state-of-the-art zinc oxide electrodes, known for their outstanding light trapping properties, via ultraviolet nanoimprint lithography. As a result of the high electron mobility and excellent near-infrared transparency of hydrogenated indium oxide, the short-circuit current density of the cells is improved with respect to indium tin oxide and zinc oxide electrodes. We assess the potential for further current gains by identifying remaining sources of parasitic absorption and evaluate the light trapping capacity of each electrode. We further present a method, based on nonabsorbing insulating silicon nitride electrodes, allowing one to directly relate the optical reflectance to the external quantum efficiency. Our method provides a useful experimental tool to evaluate the light trapping potential of novel photonic nanostructures by a simple optical reflectance measurement, avoiding complications with electrical cell performance. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3592885]
引用
收藏
页数:7
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