Influence of Field Plate on the Transient Operation of the AlGaN/GaN HEMT

被引：67

作者：

Brannick, Alan ^{[1
]}

Zakhleniuk, Nick A. ^{[1
]}

Ridley, Brian K. ^{[1
]}

Shealy, James R. ^{[2
]}

Schaff, William J. ^{[2
]}

Eastman, Lester F. ^{[2
]}

机构：

[1] Univ Essex, Sch Elect Engn & Comp Sci, Colchester CO4 3SQ, Essex, England

[2] Cornell Univ, Sch Elect & Comp Engn, Ithaca, NY 14583 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2009年 / 30卷 / 05期

关键词：

Current collapse; field plate (FP); GaN; high-electron-mobility transistor (HEMT); simulation; transient; traps; HIGH-ELECTRIC-FIELD; CURRENT COLLAPSE; SIN PASSIVATION; DEGRADATION; TRANSISTORS; DEVICES; HFETS;

D O I：

10.1109/LED.2009.2016680

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this letter, a link between the AlGaN/GaN high-electron-mobility-transistor (HEMT) field plate (FP) and the rate of reoccupation of surface traps is presented. Surface traps are considered to be among the primary factors behind HEMT performance deterioration at high frequencies. Results from simulations using the commercial software package DESSIS are presented, in which the FP is found to reduce trap reoccupation by limiting the tunneling injection of electrons into surface traps in the gate-drain region and thus considerably improve the transient operation of the device.

引用

页码：436 / 438

页数：3

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