Broadband electromagnetic response and ultrafast dynamics of few-layer epitaxial graphene

被引：208

作者：

Choi, H. ^{[1
]}

Borondics, F. ^{[2
]}

Siegel, D. A. ^{[1
,3
]}

Zhou, S. Y. ^{[1
,3
]}

Martin, M. C. ^{[2
]}

Lanzara, A. ^{[1
,3
]}

Kaindl, R. A. ^{[1
]}

机构：

[1] Univ Calif Berkeley, Lawrence Berkeley Lab, Div Mat Sci, Berkeley, CA 94720 USA

[2] Univ Calif Berkeley, Lawrence Berkeley Lab, Adv Light Source, Berkeley, CA 94720 USA

[3] Univ Calif Berkeley, Dept Phys, Berkeley, CA 94720 USA

来源：

APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 17期

关键词：

buffer layers; electromagnetism; electron-hole recombination; epitaxial layers; graphene; high-speed optical techniques; infrared spectra; monolayers; optical conductivity; photoexcitation; terahertz wave spectra; SILICON-CARBIDE; SPECTROSCOPY; SUBSTRATE;

D O I：

10.1063/1.3122348

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We study the broadband optical conductivity and ultrafast carrier dynamics of epitaxial graphene in the few-layer limit. Equilibrium spectra of nominally buffer, monolayer, and multilayer graphene exhibit significant terahertz and near-infrared absorption, consistent with a model of intra- and interband transitions in a dense Dirac electron plasma. Nonequilibrium terahertz transmission changes after photoexcitation are shown to be dominated by excess hole carriers, with a 1.2 ps monoexponential decay that reflects the minority-carrier recombination time.

引用

页数：3

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