Bias-crafted magnetic tunnel junctions with bistable spin-dependent states

被引：25

作者：

Bowen, M.

Maurice, J. -L.

Barthelemy, A.

Prod'homme, P.

Jacquet, E.

Contour, J. -P.

Imhoff, D.

Colliex, C.

机构：

[1] CNRS, Unite Mixte Phys, F-91767 Palaiseau, France

[2] Univ Paris 11, F-91405 Orsay, France

[3] ULP, IPCMS, UMR 7504, CNRS, F-67034 Strasbourg, France

[4] Univ Paris Sud, Phys Solides Lab, F-91405 Orsay, France

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 10期

关键词：

D O I：

10.1063/1.2345592

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The authors have observed stable, reversible two-resistance states with substantial tunneling magnetoresistances of opposite signs in La0.7Sr0.3MnO3/SrTiO3/Co1-xCrx junctions. Electron energy loss spectroscopy studies reveal the segregation and oxidation of electrochemically reactive chromium at that interface, resulting in oxygen vacancies in the oxide barrier. Bias-induced switching between the two junction states is argued to reflect the incidence of these barrier defects at and near the electrically unstable SrTiO3/Co1-xCrx interface. This affirms bias crafting as an additional lever in spintronic research across semiconducting spacers. (c) 2006 American Institute of Physics.

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页数：3

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