A MOSFET-only continuous-time bandpass filter

被引：21

作者：

Huang, QT

机构：

[1] Integrated Systems Laboratory, Swiss Fed. Institute of Technology

[2] Department of Precision Instruments, Harbin Lnstitute of Technology, Harbin

[3] Katholieke Universiteit Leuven, Departement Elektrotechniek, ESAT Laboratories, Heverlee

[4] University of East Anglia, Norwich

[5] Integrated System Laboratory, Swiss Fed. Institute of Technology, Zürich

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1997年 / 32卷 / 02期

关键词：

bandpass filter; continuous-time filter; filter distortion; MOSFET-only filter; transconductor;

D O I：

10.1109/4.551906

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A MOSFET-only filter is described which employs an amplifier-regulated cascode structure to realize both conductance and transconductance, while the required capacitors are realized by MOSFET gate capacitance. Distortion due to mobility degradation and MOSFET capacitor nonlinearity is analysed, as is the effect of finite gain-bandwidth product of the regulating amplifiers on the filter's linearity and high frequency performance, A prototype second-order bandpass filter has a center frequency of 560 kHz, a third-order intermodulation of -41 dB for 0 dBm input and a dynamic range of 60 dB. It consumes 2.5 mW from a 5 V supply and occupies 0.18 mm(2) in a 1-mu m digital CMOS technology.

引用

页码：147 / 158

页数：12

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