Low threshold-14 W/mm ZrO2/AlGaN/GaN metal-oxide-semiconductor heterostructure field effect transistors

被引：25

作者：

Rai, S ^{[1
]}

Adivarahan, V ^{[1
]}

Tipirneni, N ^{[1
]}

Koudymov, A ^{[1
]}

Yang, JW ^{[1
]}

Simin, G ^{[1
]}

Khan, MA ^{[1
]}

机构：

[1] Univ S Carolina, Dept EE, Columbia, SC 29208 USA

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2006年 / 45卷 / 6A期

关键词：

AlGaN/GaN; zirconium dioxide; threshold voltage; gate leakage current; field-plate; E-beam evaporation;

D O I：

10.1143/JJAP.45.4985

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report for the first time on the RF performance of a low-threshold AlGaN/GaN metal-oxide-semiconductor heterostructure field transistor (MOSHFET) with zirconium dioxide as the gate dielectric. Low gate leakage current of 5 x 10(-7) A/mm(2) and a threshold voltage which was only 1 V higher than that of an HFET were achieved. The RF power of these devices at 2 GHz was 14.32 W/mm at 50 V drain bias.

引用

收藏

页码：4985 / 4987

页数：3

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