Effect of uniaxial strain on anisotropic diffusion in silicon

被引：10

作者：

Chen, Ming-Jer ^{[1
]}

Sheu, Yi-Ming ^{[1
]}

机构：

[1] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 300, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 16期

关键词：

BORON-DIFFUSION; ACTIVATION VOLUME; DOPANT DIFFUSION; RELAXED SI;

D O I：

10.1063/1.2362980

中图分类号：

O59 [应用物理学];

学科分类号：

070305 [高分子化学与物理];

摘要：

A physical model is directly extended from the thermodynamic framework to deal with anisotropic diffusion in uniaxially stressed silicon. With the anisotropy of the uniaxial strain induced activation energy as input, two fundamental material parameters, the activation volume and the migration strain anisotropy, can be quantitatively determined. When applied to boron, a process- device coupled simulation is performed on a p-type metal-oxide-semiconductor field-effect transistor undergoing uniaxial stress in a manufacturing process. The resulting material parameters have been found to be in satisfactory agreement with values presented in the literature. (c) 2006 American Institute of Physics.

引用

页数：3

共 19 条

[1]

Pressure and stress effects on the diffusion of B and Sb in Si and Si-Ge alloys [J].