Experimental and theoretical radiation damage studies on crystalline silicon solar cells

被引:55
作者
Alurralde, M
Tamasi, MJL
Bruno, CJ
Bogado, MGM
Plá, J
Vázquez, JF
Durán, J
Schuff, J
Burlon, AA
Stoliar, P
Kreiner, AJ
机构
[1] CNEA, CAC, Dept Mat, RA-1650 San Martin, Buenos Aires, Argentina
[2] CNEA, CAC, Dept Fis, RA-1650 San Martin, Buenos Aires, Argentina
[3] Consejo Nacl Invest Cient & Tecn, Consejo Nacl Invest Cient & Tecn, RA-1033 Buenos Aires, DF, Argentina
[4] Univ San Martin, Escuela Ciencia & Tecnol, Villa Ballester, Argentina
关键词
radiation damage; c-Si solar cells; space applications;
D O I
10.1016/j.solmat.2003.11.029
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
An experimental facility was developed to asses in situ the degradation of crystalline silicon solar cells, fabricated by the Solar Energy Group of the National Atomic Energy Commission (CNEA), by measuring the current-voltage characteristic curve. The cells were irradiated with 10 MeV protons and fluences between 10(8) and 10(13) p/cm(2), using an external beam of the linear tandem accelerator TANDAR, at CAC-CNEA. Furthermore, theoretical simulations were performed to establish the relation between the variation of the electrical parameters and the degradation of the lifetime of minority carriers in the base. The damage constant for 10 MeV proton irradiated silicon solar cells of n(+)-p-p(+) structure and 1 Omega cm base resistivity was determined. Finally, a proposal of a new model of radiation damage for silicon solar cells is discussed. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码:531 / 542
页数:12
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