TEMPERATURE-DEPENDENCE OF DAMAGE COEFFICIENT IN ELECTRON-IRRADIATED SOLAR CELLS

被引：3

作者：

FAITH, TJ ^{[1
]}

机构：

[1] RCA CORP,ASTRO ELECTR DIV,PRINCETON,NJ 08540

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1973年 / NS20卷 / 06期

关键词：

D O I：

10.1109/TNS.1973.4327401

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：238 / 242

页数：5

共 15 条

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[6]

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[7] RECOMBINATION LIFETIMES IN GAMMA-IRRADIATED SILICON [J].

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[8] ELECTRICAL PROPERTIES OF SILICON CONTAINING ARSENIC AND BORON [J].

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[9]

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[10]

OBENSCHAIN AF, 1969, X71669390 NASA GODD

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